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| SBP13009-O High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. C E TO220 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25 Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12 25 6.0 12 100 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W Thermal Characteristics Symbol RJc RJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.25 40 Units /W /W Jan 2008. Rev. 0 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 SBP13009-O Electrical Characteristics (TC=25 unless otherwise noted) Value Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A VCE(sat) Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100 I Ic=5.0A,Ib=1.0A VBE(sat) Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100 ICBO Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Vcb=700V Vcb=700V, Tc=100 Vce=5V,Ic=5.0A Vce=5V, Ic=8.0A Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time VCC=125V , IB1=1.6A , Tp=25 Ic=6.0A IB2=-1.6A 10 6 1.5 0.17 3.0 0.4 1.0 5.0 40 40 mA 1.2 1.6 1.5 V Min 400 Typ Max 1.0 1.5 3.0 2.0 V V Symbol VCEO(sus) Units V V hFE ts tf ts tf VCC=15V ,Ic=5A IB1=1.6A , Vbe(off)=5V L=0.35mH,Vclamp=300V VCC=15V ,Ic=1A IB1=0.4A , Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100 - 0.8 0.04 2.0 0.1 ts tf - 0.8 0.05 2.5 0.15 Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13009-O Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13009-O Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13009-O TO-220 Package Dimension Unit: mm 5/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. |
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